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savantic semiconductor product specification silicon npn power transistors 2SD727 d escription with to-3pn package complement to type 2sb691 applications for low frequency power amplifier and power switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 130 v v ceo collector-emitter voltage open base 130 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a p c collector power dissipation t c =25 60 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD727 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma ;i b =0 130 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v cesat collector-emitter saturation voltage i c =5a ;i b =0.5a 2.5 v i cbo collector cut-off current v cb =130v; i e =0 0.1 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 60 200 h fe-2 dc current gain i c =4a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =5v 7 mhz c ob collector output capacitance i e =0 ;f=1mhz;v cb =10v 110 pf
savantic semiconductor product specification 3 silicon npn power transistors 2SD727 package outline fig.2 outline dimensions

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